Von Rehan Ahmad Siddiqui
TUDpress 2010. Kartoniert, 21 x 14.8 cm, XII, 148 S., zahlr. Abb.
Organometallic compounds are often volatile enough to be useful as precursors of the metals in vapor phase deposition process, e.g. chemical vapor deposition (CVD). This work reports the thermal stability, vapor pressure and the gaseous diffusion coefficient for numerous organometallic compounds that are used as CVD precursors. These include metal acetylacetonates, metal 2,2,6,6-tetramethyl-3,5-heptandionate, metallocene and some newly synthesized precursors or non commercial precursors of hafnium, zirconium, ruthenium, tungsten and copper. The vapor pressure was measured using Knudsen effusion method. The vapor pressures determined using the Knudsen cell were combined with the thermogravimetric measurements to obtain the diffusion coefficients. The gaseous diffusion coefficients for the organometallic compounds have been reported for the first time.
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